Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Contents include: * The history of EUV Lithography * EUV source technology (requirements, technology descriptions, and status) * EUV optics (projection system design, multilayer coatings, and substrates) * Various EUV wavefront measurement techniques for optical testing *Contamination and its control in EUVL scanners (optics and collector optics contamination) * EUV mask and mask metrology (substrates, blank fabrication, absorber stacks and backside conductive coatings, patterning, cleaning, and phase shift masks) * The fundamentals and development of EUV resist technology, including LER * The design and components of the first METs, which have enabled resist development * The fundamental design considerations for an EUVL scanner and descriptions of a full-field scanner's various components * EUVL system patterning performance * Lithography cost of ownership. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology.

EUV Lithography (SPIE Press Monograph Vol. PM178) PDF

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